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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3811
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3811 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
? Super low on-state resistance
R DS(on) = 1.8 m ? MAX. (V GS = 10 V, I D = 55 A)
? High Current Rating: I D(DC) = ±110 A
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
2SK3811-ZP
PACKAGE
TO-263 (MP-25ZP)
(TO-263)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
40
±20
±110
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±440
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
213
1.5
150
? 55 to +150
W
W
°C
°C
Single Avalanche Energy
Note2
E AS
518
mJ
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note3
Note3
I AR
E AR
72
518
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 20 V, R G = 25 ? , V GS = 20 → 0 V, L = 100 μ H
3. R G = 25 ? , T ch(peak) ≤ 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16737EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
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相关代理商/技术参数
2SK3812-ZP-A E2
制造商:Renesas Electronics Corporation 功能描述:
2SK3812-ZP-E1-A
制造商:Renesas Electronics Corporation 功能描述:
2SK3812-ZP-E1-AY
功能描述:MOSFET N-CH 60V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3812-ZP-E1-AZ
制造商:Renesas Electronics Corporation 功能描述:
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功能描述:MOSFET N-CH 40V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3813-Z-AZ
制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 60A 3-Pin(2+Tab) TO-252 Cut Tape
2SK3814-AZ
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2SK3814-Z-AZ
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